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  由静电学可知,对于平行板电容器,有如下的关系式:C=ε.S/L ……①即电容的容量与介质的介电常数成正比,与两个极板的面积成正比,与两个极板之间的距离成反比。
  另外,当一个电容器充有Q量的电荷,那么电容器两个极板要形成一定的电压,有如下关系式:C=Q/V ……②
  对于一个驻极体咪头,内部存在一个由振膜,垫片和极板组成的电容器,因为膜片上充有电荷,并且是一个塑料膜,因此当膜片受到声压强的作用,膜片要产生振动,从而改变了膜片与极板之间的距离,从而改变了电容器两个极板之间的距离,产生了一个Δd的变化,因此由公式①可知,必然要产生一个ΔC的变化,由公式②又知,由于ΔC的变化,充电电荷又是固定不变的,因此必然产生一个ΔV的变化。
  这样初步完成了一个由声信号到电信号的转换。
  由于这个信号非常微弱,内阻非常高,不能直接使用,因此还要进行阻抗变换和放大。
  FET场效应管是一个电压控制元件,漏极的输出电流受源极与栅极电压的控制。
  由于电容器的两个极是接到FET的S极和G极的,因此相当于FET的S极与G极之间加了一个Δv的变化量,FET的漏极电流I就产生一个ΔID的变化量,因此这个电流的变化量就在电阻RL上产生一个ΔVD的变化量,这个电压的变化量就可以通过电容C0输出,这个电压的变化量是由声压引起的,因此整个咪头就完成了一个声电的转换过程。

According to electrostatics, for a parallel plate capacitor, there is the following relationship: C=ε. S/L ......1 means that the capacitance of the capacitor is proportional to the dielectric constant of the dielectric and is proportional to the area of the two plates and inversely proportional to the distance between the two plates.
In addition, when a capacitor is charged with a Q amount of charge, then the two plates of the capacitor must form a certain voltage, with the following relation: C=Q/V...2
For an electret microphone head, there is a capacitor internally composed of a diaphragm, a gasket and a plate, because the diaphragm is charged with electricity and is a plastic film, so when the diaphragm is subjected to a sound pressure, the diaphragm To generate vibration, thus changing the distance between the diaphragm and the plate, thus changing the distance between the two plates of the capacitor, a change of Δd is generated. Therefore, it can be seen from Formula 1 that a change of ΔC is inevitable. From equation 2, it is also known that due to the change in ΔC, the charge charge is fixed, and therefore a change of ΔV is inevitable.
This initially completes a conversion from an acoustic signal to an electrical signal.
Since this signal is very weak, the internal resistance is very high and cannot be used directly. Therefore, impedance transformation and amplification are also required.
The FET FET is a voltage control device. The drain output current is controlled by the source and gate voltages.
Since the two poles of the capacitor are connected to the S and G poles of the FET, it is equivalent to adding a ΔV variation between the S pole and the G pole of the FET. The FET drain current I produces a ΔID change. The amount of change in the current therefore produces a ΔVD variation in the resistor RL. The amount of change in this voltage can be output through the capacitor C0. The amount of change in this voltage is caused by the sound pressure, so the entire microphone is completed. A sound and electricity conversion process.
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